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Discrete Semiconductor Products  ·  Transistors (BJT) - Single

 
2N2102

- Dimensional Drawing

2N2102 — TRANSISTOR NPN 120V 1A TO-39

ManufacturerSTMicroelectronics
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)65V
Vce Saturation (Max) @ Ib, Ic550mV @ 150mA, 15mA
Current - Collector (Ic) (Max)1A
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Power - Max1W
Transistor TypeNPN
Mounting TypeThrough Hole
Package / CaseTO-39-3, TO-205AD, Metal Can
Found under name497-2636-5
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